Towards RIP using free-electron laser SFX data
Category
Published on
Type
journal-article
Author
Lorenzo Galli and Sang-Kil Son and Thomas A. White and Robin Santra and Henry N. Chapman and Max H. Nanao
Citation
Galli, L. et al., 2015. Towards RIP using free-electron laser SFX data. J Synchrotron Rad, 22(2), pp.249–255. Available at: http://dx.doi.org/10.1107/s1600577514027854.
Abstract
Here, it is shown that simulated native serial femtosecond crystallography (SFX) cathepsin B data can be phased by rapid ionization of sulfur atoms. Utilizing standard software adopted for radiation-damage-induced phasing (RIP), the effects on both substructure determination and phasing of the number of collected patterns and fluences are explored for experimental conditions already available at current free-electron laser facilities.