Towards RIP using free-electron laser SFX data

By Lorenzo Galli, Sang-Kil Son, Thomas A. White, Robin Santra, Henry Chapman1, Max H. Nanao

1. Center for Free-Electron Laser Science

See also

No results found.

Published on

Type

journal-article

Author

Lorenzo Galli and Sang-Kil Son and Thomas A. White and Robin Santra and Henry N. Chapman and Max H. Nanao

Citation

Galli, L. et al., 2015. Towards RIP using free-electron laser SFX data. J Synchrotron Rad, 22(2), pp.249–255. Available at: http://dx.doi.org/10.1107/s1600577514027854.

Abstract

Here, it is shown that simulated native serial femtosecond crystallography (SFX) cathepsin B data can be phased by rapid ionization of sulfur atoms. Utilizing standard software adopted for radiation-damage-induced phasing (RIP), the effects on both substructure determination and phasing of the number of collected patterns and fluences are explored for experimental conditions already available at current free-electron laser facilities.

DOI